HIT HAT2031T-D Datasheet
HAT2031T
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-529F (Z)
7th. Edition
February 1999
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
TSSOP–8
1, 8 Drain
2, 3, 6, 7 Source
4, 5 Gate
1
2
3
4
8
7
6
5
G
D
S
2
4
1
S
3
G
D
S S
5
8
6
7
MOS1
MOS2
HAT2031T
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
20 V
Gate to source voltage V
GSS
± 12 V
Drain current I
D
3.5 A
Drain peak current I
D(pulse)
Note1
28 A
Body-drain diode reverse drain current I
DR
3.5 A
Channel dissipation Pch
Note2
1W
Channel dissipation Pch
NoteÇR
1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
20——V I
D
= 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
± 12 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current I
GSS
——± 10 µAVGS = ± 10 V, VDS = 0
Zero gate voltege drain current I
DSS
——1 µAVDS = 12 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
0.5 — 1.5 V VDS = 10 V, I D = 1m A
Static drain to source on state R
DS(on)
— 0.054 0.070 Ω ID = 2 A, VGS = 4 V
Note4
resistance R
DS(on)
— 0.074 0.098 Ω ID = 2 A, VGS = 2.5 V
Note4
Forward transfer admittance |yfs| 4.5 7 — S ID = 2 A, VDS = 10 V
Note4
Input capacitance Ciss — 300 — pF VDS = 10 V
Output capacitance Coss — 185 — pF VGS = 0
Reverse transfer capacitance Crss — 90 — pF f = 1MHz
Turn-on delay time t
d(on)
— 13 — ns VGS = 4 V, ID = 2 A
Rise time t
r
— 75 — ns VDD ≅ 10 V
Turn-off delay time t
d(off)
—60—ns
Fall time t
f
—75—ns
Body–drain diode forward voltage V
DF
— 0.85 1.11 V IF = 3.5 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
— 35 — ns IF = 3.5 A, VGS = 0
diF/ dt = 20 A/µs
Note: 4. Pulse test
HAT2031T
3
Main Characteristics
V = 1.5 V
GS
0
50 100 150 200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30 100
20
16
12
8
4
0
246810
20
16
12
8
4
0
1234
5
2.0
1.5
1.0
0.5
Ta = 25 °C
1 shot Pulse
10 µs
100 µs
1 ms
PW = 10 ms
10V
4 V
3 V
V = 1.5 V
GS
5 V
2.5 V
Tc = 75°C
25°C
–25°C
2.0 V
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
2 Drive Operation
1 Drive Operation
Note 5
DC Operation (PW < 10 s)
Drain to Source Voltage V (V)
Maximum Safe Operation Area
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Operation in
this area is
limited by R
DS(on)
DS
Drain to Source Voltage V (V)
DS
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V (V)
GS
Typical Transfer Characteristics
V = 10 V
Pulse Test
DS
Drain Current I (A)
D
Drain Current I (A)
D
Drain Current I (A)
D
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