HIT HAT2029R-D Datasheet
HAT2029R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-525D (Z)
5th. Edition
February 1999
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP–8
1
2
3
4
5
6
7
8
G
DSD
G
DSD
MOS1
MOS2
1
2
78
4
5
6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT2029R
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
28 V
Gate to source voltage V
GSS
± 12 V
Drain current I
D
7.5 A
Drain peak current I
D(pulse)
Note1
60 A
Body-drain diode reverse drain current I
DR
7.5 A
Channel dissipation Pch
Note2
2W
Channel dissipation Pch
Note3
3W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
28——V I
D
= 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
± 12 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current I
GSS
——± 10 µAVGS = ± 10 V, VDS = 0
Zero gate voltege drain current I
DSS
——1 µAVDS = 28 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
0.4 — 1.4 V VDS = 10 V, I D = 1 mA
Static drain to source on state R
DS(on)
— 0.025 0.033 Ω ID = 4 A, VGS = 4 V
Note4
resistance R
DS(on)
— 0.031 0.043 Ω ID = 4 A, VGS = 2.5 V
Note4
Forward transfer admittance |yfs| 9.5 15 — S ID = 4 A, VDS = 10 V
Note4
Input capacitance Ciss — 780 — pF VDS = 10 V
Output capacitance Coss — 470 — pF VGS = 0
Reverse transfer capacitance Crss — 190 — pF f = 1MHz
Turn-on delay time t
d(on)
— 20 — ns VGS = 4 V, ID = 4 A
Rise time t
r
— 170 — ns VDD ≅ 10 V
Turn-off delay time t
d(off)
— 140 — ns
Fall time t
f
— 170 — ns
Body–drain diode forward voltage V
DF
— 0.88 1.15 V IF = 7.5 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
— 65 — ns IF = 7.5 A, VGS = 0
diF/ dt = 20 A/µs
Note: 4. Pulse test
HAT2029R
3
Main Characteristics
Channel Dissipation Pch (W)
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50 100 150 200
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30 100
10 µs
1 ms
PW = 10 ms
50
40
30
20
10
0
246810
10 V
6 V
3 V
3.5 V
V = 1.5 V
GS
4 V
5 V
50
40
30
20
10
0
1234
5
Tc = –25 °C
75 °C
25 °C
2 Drive Operation
1 Drive Operation
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
DS
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 5
DC Operation (PW < 10 s)
Ta = 25 °C
1 shot Pulse
1 Drive Operation
100 µs
2.5 V
2 V
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