HIT HAT2028RJ, HAT2028R-D Datasheet
HAT2028R/HAT2028RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-524C (Z)
4th. Edition
February 1999
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
SOP–8
1
2
3
4
5
6
7
8
G
DSD
G
DSD
MOS1
MOS2
1
2
78
4
5
6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT2028R/HAT2028RJ
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
± 20 V
Drain current I
D
4A
Drain peak current I
D(pulse)
Note1
32 A
Body-drain diode reverse drain current I
DR
4A
Avalanche current HAT2028R I
AP
Note4
——
HAT2028RJ 4 A
Avalanche energy HAT2028R E
AR
Note4
——
HAT2028RJ 1.37 mJ
Channel dissipation Pch
Note2
2W
Channel dissipation Pch
Note3
3W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
4. Value at Tch=25°C, Rg≥50Ω
HAT2028R/HAT2028RJ
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdownvoltage V
(BR)DSS
60——V ID = 10 mA, VGS = 0
Gate to source breakdownvoltage V
(BR)GSS
± 20 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current I
GSS
——± 10 µAVGS = ± 16 V, VDS = 0
Zero gate voltage HAT2028R I
DSS
——1 µAVDS = 60 V, VGS = 0
drain current HAT2028RJ I
DSS
— — 0.1 µA
Zero gate voltage HAT2028R I
DSS
———µAVDS = 48 V, VGS = 0
drain current HAT2028RJ I
DSS
——10µA Ta = 125°C
Gate to source cutoff voltage V
GS(off)
1.3 — 2.3 V VDS = 10 V, I D = 1 mA
Static drain to source on state resistance R
DS(on)
— 0.08 0.1 Ω ID = 2 A, VGS = 10 V
Note5
R
DS(on)
— 0.12 0.16 Ω ID = 2 A, VGS = 4 V
Note5
Forward transfer admittance |yfs| 3.3 5 — S ID = 2 A, VDS = 10 V
Note5
Input capacitance Ciss — 280 — pF VDS = 10 V
Output capacitance Coss — 150 — pF VGS = 0
Reverse transfer capacitance Crss — 55 — pF f = 1MHz
Turn-on delay time t
d(on)
— 15 — ns VGS = 4 V, ID = 2 A
Rise time t
r
— 100 — ns VDD ≅ 30 V
Turn-off delay time t
d(off)
—35—ns
Fall time t
f
—45—ns
Body–drain diode forwardvoltage V
DF
— 0.88 1.15 V IF = 4 A, VGS = 0
Note5
Body–drain diode reverse recovery time t
rr
— 40 — ns IF = 4 A, VGS = 0
diF/ dt = 50 A/µs
Note: 5. Pulse test
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