HIT HAT2026R Datasheet

Silicon N Channel Power MOS FET

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

HAT2026R

High Speed Power Switching

ADE-208-523 C (Z)

4th. Edition

February 1999

SOP–8

4

G

56 7 8
D

D

DD

SSS
1

23

5

6

7

8

2

1

1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain

4

3

HAT2026R

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs|1827—S ID = 6 A, VDS = 10 V
Input capacitance Ciss — 1760 — pF VDS = 10 V
Output capacitance Coss — 1130 — pF VGS = 0
Reverse transfer capacitance Crss — 450 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

The specifications may be change without notice.

20——V I
± 12 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 10 V, VDS = 0
——1 µAVDS = 20 V, VGS = 0

0.4 — 1.4 V VDS = 10 V, I D = 1 mA
— 0.011 0.015 Ω ID = 6 A, VGS = 4 V
— 0.014 0.021 Ω ID = 6 A, VGS = 2.5 V

— 35 — ns VGS = 4 V, ID = 6 A
— 275 — ns VDD ≅ 10 V
— 300 — ns
— 340 — ns
— 0.83 1.08 V IF = 11 A, VGS = 0
— 75 — ns IF = 11 A, VGS = 0

20 V
± 12 V
11 A
88 A
11 A

2.5 W

= 10 mA, VGS = 0

D

diF/ dt = 20 A/µs

Note3

Note3

Note3

Note3

2

Main Characteristics

HAT2026R

Power vs. Temperature Derating

4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

50

10V

5 V

40

4 V
3 V

D

2.5 V

30

Pulse Test

2 V

100

Maximum Safe Operation Area

30
10

D

DC Operation (PW < 10 s)

3
1

Operation in
this area is

0.3

limited by R

Drain Current I (A)

0.1

0.03

Ta = 25 °C
1 shot Pulse

0.01

0.1

0.3 1 3 10 30 100

DS(on)

Drain to Source Voltage V (V)
Note 4 :

When using the glass epoxy board
(FR4 40x40x1.6 mm)

Typical Transfer Characteristics

50

40

D

30

1 ms

PW = 10 ms

Note 4

V = 10 V

DS

Pulse Test

10 µs

100 µs

DS

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

V = 1.5 V

GS

DS

20

75°C

Drain Current I (A)

10

0

1234

Tc = –25°C

25°C

Gate to Source Voltage V (V)

5

GS

3