HIT HAT2025R Datasheet
Silicon N Channel Power MOS FET
Features
• High speed switching
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
HAT2025R
High Speed Power Switching
ADE-208-518C (Z)
4th. Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2025R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 7 11 — S ID = 4 A, VDS = 10 V
Input capacitance Ciss — 660 — pF VDS = 10 V
Output capacitance Coss — 510 — pF VGS = 0
Reverse transfer capacitance Crss — 130 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
30——V I
± 20 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 16 V, VDS = 0
——10µAVDS = 30 V, VGS = 0
1.3 — 2.4 V VDS = 10 V, I D = 1 mA
— 0.019 0.026 Ω ID = 4 A, VGS = 10 V
— 0.030 0.050 Ω ID = 4 A, VGS = 4.5 V
— 30 — ns VGS = 4 V, ID = 4 A
— 265 — ns VDD ≅ 10 V
—35—ns
—58—ns
— 0.8 1.3 V IF = 8 A, VGS = 0
— 55 — ns IF = 8 A, VGS = 0
30 V
± 20 V
8A
64 A
8A
2.5 W
= 10 mA, VGS = 0
D
Note3
diF/ dt = 20 A/µs
Note3
Note3
Note3
2
Main Characteristics
HAT2025R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10V
20
5 V
5 V
4.5 V
16
D
4 V
12
3.5 V
Pulse Test
100
Maximum Safe Operation Area
10 µs
30
10
D
DC Operation (PW < 10 s)
3
1
Operation in
0.3
this area is
0.1
0.03
0.01
0.1
limited by R
DS(on)
Ta = 25 °C
1 shot Pulse
0.3 1 3 10 30 100
Drain Current I (A)
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
50
40
D
30
–25°C
100 µs
1 ms
PW = 10 ms
Note 4
25°C
Tc = 75°C
DS
8
Drain Current I (A)
4
0
246810
Drain to Source Voltage V (V)
3 V
V = 2.5 V
GS
DS
20
Drain Current I (A)
10
0
2468
Gate to Source Voltage V (V)
V = 10 V
DS
Pulse Test
GS
10
3
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