HIT HAT2022R Datasheet
Silicon N Channel Power MOS FET
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
HAT2022R
High Speed Power Switching
ADE-208-440 J (Z)
11th Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2022R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|1218—S ID = 6 A, VDS = 10 V
Input capacitance Ciss — 1450 — pF VDS = 10 V
Output capacitance Coss — 950 — pF VGS = 0
Reverse transfer capacitance Crss — 380 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
30——V I
± 20 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 16 V, VDS = 0
——10µAVDS = 30 V, VGS = 0
1.0 — 2.0 V VDS = 10 V, I D = 1 mA
— 0.012 0.015 Ω ID = 6 A, VGS = 10 V
— 0.017 0.025 Ω ID = 6 A, VGS = 4 V
— 60 — ns VGS = 4 V, ID = 6 A
— 450 — ns VDD ≅ 10 V
—80—ns
— 160 — ns
— 0.8 1.3 V IF = 11 A, VGS = 0
— 70 — ns IF = 11 A, VGS = 0
30 V
± 20 V
11 A
88 A
11 A
2.5 W
= 10 mA, VGS = 0
D
diF/ dt = 20 A/µs
Note3
Note3
Note3
Note3
2
Main Characteristics
HAT2022R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10V
6 V
40
5 V
D
4.5 V
30
4 V
Pulse Test
3.5 V
100
Maximum Safe Operation Area
30
10
D
DC Operation (PW < 10 s)
3
1
Operation in
0.3
this area is
0.1
0.03
0.01
0.1
limited by R
Ta = 25 °C
1 shot Pulse
0.3 1 3 10 30 100
Drain Current I (A)
DS(on)
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
20
V = 10 V
DS
Pulse Test
16
D
12
1 ms
PW = 10 ms
Note 4
10 µs
100 µs
DS
20
Drain Current I (A)
10
V = 2.5 V
GS
0
246810
Drain to Source Voltage V (V)
3 V
DS
8
Drain Current I (A)
4
0
Tc = 75°C
1234
Gate to Source Voltage V (V)
25°C
–25°C
5
GS
3
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