HIT HAT2020R Datasheet

Silicon N Channel Power MOS FET
Features
Low on-resistance
Low drive current
High density mounting
Outline
HAT2020R
High Speed Power Switching
ADE-208-439 J (Z)
11th. Edition
February 1999
SOP–8
4
G
56 7 8 D
D
DD
SSS 1
23
5
6
7
8
2
1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
4
3
HAT2020R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW 10µs, duty cycle 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 7 11 S ID = 4 A, VDS = 10 V Input capacitance Ciss 780 pF VDS = 10 V Output capacitance Coss 560 pF VGS = 0 Reverse transfer capacitance Crss 240 pF f = 1MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time Note: 3. Pulse test
30——V I ± 20 V IG = ± 100 µA, VDS = 0 ——± 10 µAVGS = ± 16 V, VDS = 0 ——10µAVDS = 30 V, VGS = 0
1.0 2.0 V VDS = 10 V, I D = 1m A — 0.020 0.028 ID = 4 A, VGS = 10 V — 0.030 0.050 ID = 4 A, VGS = 4 V
35 ns VGS = 4 V, ID = 4 A — 240 ns VDD 10 V —50—ns — 100 ns — 0.8 1.3 V IF = 8 A, VGS = 0 — 55 ns IF = 8 A, VGS = 0
30 V ± 20 V 8A 64 A 8A
2.5 W
= 10 mA, VGS = 0
D
Note3
diF/ dt = 20 A/µs
Note3
Note3
Note3
2
Main Characteristics
HAT2020R
Power vs. Temperature Derating
4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10V
6 V
16
D
12
5 V
4.5 V 4 V
3.5 V
Pulse Test
100
Maximum Safe Operation Area
10 µs
30 10
D
DC Operation (PW < 10 s)
3 1
Operation in
0.3
this area is limited by R
Drain Current I (A)
0.1
0.03
Ta = 25 °C 1 shot Pulse
0.01
0.1
0.3 1 3 10 30 100
DS(on)
Drain to Source Voltage V (V) Note 4 :
When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Transfer Characteristics
20
V = 10 V
DS
Pulse Test
16
D
12
100 µs
1 ms
PW = 10 ms
Note 4
DS
8
Drain Current I (A)
4
V = 2.5 V
0
246810
Drain to Source Voltage V (V)
GS
3 V
DS
8
Drain Current I (A)
4
0
Tc = 75°C
1234
Gate to Source Voltage V (V)
25°C
–25°C
5
GS
3
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