HIT HAT2019R Datasheet
Silicon N Channel Power MOS FET
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
HAT2019R
High Speed Power Switching
ADE-208-481 D (Z)
5th. Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT2019R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|1016—S ID = 4 A, VDS = 10 V
Input capacitance Ciss — 920 — pF VDS = 10 V
Output capacitance Coss — 550 — pF VGS = 0
Reverse transfer capacitance Crss — 225 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
30——V I
± 12 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 10 V, VDS = 0
——10µAVDS = 30 V, VGS = 0
0.5 — 1.5 V VDS = 10 V, I D = 1 mA
— 0.020 0.027 Ω ID = 4 A, VGS = 4 V
— 0.027 0.037 Ω ID = 4 A, VGS = 2.5 V
— 25 — ns VGS = 4 V, ID = 4 A
— 180 — ns VDD ≅ 10 V
— 165 — ns
— 185 — ns
— 0.8 1.3 V IF = 8 A , VGS = 0
— 60 — ns IF = 8 A, VGS = 0
30 V
± 12 V
8A
64 A
8A
2.5 W
= 10 mA, VGS = 0
D
Note3
diF/ dt = 20 A/µs
Note3
Note3
Note3
2
Main Characteristics
HAT2019R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10V
50
5 V
4.5 V
40
D
4 V
3.5 V
30
3 V
Pulse Test
2.5 V
100
Maximum Safe Operation Area
10 µs
30
10
D
DC Operation (PW < 10 s)
3
1
Operation in
0.3
this area is
0.1
0.03
0.01
limited by R
DS(on)
Ta = 25 °C
1 shot Pulse
0.1
0.3 1 3 10 30 100
Drain Current I (A)
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
50
40
–25°C
D
30
25°C
100 µs
1 ms
PW = 10 ms
Note 4
DS
Tc = 75°C
20
Drain Current I (A)
10
0
246810
Drain to Source Voltage V (V)
2 V
V = 1.5 V
GS
DS
20
Drain Current I (A)
10
0
1234
Gate to Source Voltage V (V)
V = 10 V
DS
Pulse Test
GS
5
3
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