HIT HAT2016R-D Datasheet
HAT2016R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-438 H (Z)
9th. Edition
June 1997
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
SOP–8
1
2
3
4
5
6
7
8
G
DSD
G
DSD
MOS1
MOS2
1
2
78
4
5
6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT2016R
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
6.5 A
Drain peak current I
D(pulse)
Note1
52 A
Body-drain diode reverse drain current I
DR
6.5 A
Channel dissipation Pch
Note2
2W
Channel dissipation Pch
Note3
3W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
HAT2016R
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Zero gate voltege drain current I
DSS
——10µAV
DS
= 30 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V VDS = 10V, I D = 1mA
Static drain to source on state R
DS(on)
— 0.03 0.045 Ω ID = 4A, VGS = 10V
Note4
resistance R
DS(on)
— 0.05 0.08 Ω ID = 4A, VGS = 4V
Note4
Forward transfer admittance |yfs| 58—SI
D
= 4A, VDS = 10V
Note4
Input capacitance Ciss — 560 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 170 — pF f = 1MHz
Turn-on delay time t
d(on)
— 30 — ns VGS = 4V, ID = 4A
Rise time t
r
— 270 — ns VDD ≅ 10V
Turn-off delay time t
d(off)
—40—ns
Fall time t
f
—65—ns
Body–drain diode forward
voltage
V
DF
— 0.9 1.4 V IF = 6.5A, VGS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
— 45 — ns IF = 6.5A, VGS = 0
diF/ dt =20A/µs
Note: 4. Pulse test
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