HIT HAT1038RJ, HAT1038R-D Datasheet
HAT1038R/HAT1038RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-663C (Z)
4th. Edition
February 1999
Features
• For Automotive Application ( at Type Code “J “)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
SOP–8
1
2
3
4
5
6
7
8
G
DSD
G
DSD
MOS1
MOS2
1
2
78
4
5
6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT1038R/HAT1038RJ
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
– 60 V
Gate to source voltage V
GSS
± 20 V
Drain current I
D
– 3.5 A
Drain peak current I
D(pulse)
Note1
– 28 A
Body-drain diode reverse drain current I
DR
– 3.5 A
Avalanche current HAT1038R I
AP
Note4
——
HAT1038RJ – 3.5 A
Avalanche energy HAT1038R E
AR
Note4
——
HAT1038RJ 1.05 mJ
Channel dissipation Pch
Note2
2W
Channel dissipation Pch
Note3
3W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
HAT1038R/HAT1038RJ
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
– 60 — — V ID = – 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
± 20 — — V IG = ± 100 µA, VDS = 0
Gate to source leak current I
GSS
——± 10 µAVGS = ± 16 V, VDS = 0
Zero gate voltage HAT1038R I
DSS
— — – 1 µAVDS = – 60 V, VGS = 0
drain current HAT1038RJ I
DSS
— — – 0.1 µA
Zero gate voltage HAT1038R I
DSS
———µAVDS = – 48 V, VGS = 0
drain current HAT1038RJ I
DSS
— — –10 µA Ta=125°C
Gate to source cutoff voltage V
GS(off)
– 1.2 — – 2.2 V VDS = – 10 V, I D = – 1 mA
Static drain to source on state R
DS(on)
— 0.12 0.15 Ω ID = – 2 A, VGS = – 10 V
Note5
resistance R
DS(on)
— 0.16 0.23 Ω ID = – 2 A, VGS = – 4 V
Note5
Forward transfer admittance |yfs| 3 4.5 — S ID = – 2 A, VDS = – 10 V
Note5
Input capacitance Ciss — 600 — pF VDS = –10 V
Output capacitance Coss — 290 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time t
d(on)
— 11 — ns VGS = –10 V, ID = – 2 A
Rise time t
r
— 30 — ns VDD ≅ – 30 V
Turn-off delay time t
d(off)
— 100 — ns
Fall time t
f
—55—ns
Body–drain diode forward voltage V
DF
— – 0.98 – 1.28 V IF = – 3. 5 A, VGS = 0
Note5
Body–drain diode reverse
recovery time
t
rr
— 70 — ns IF = – 3. 5 A, VGS = 0
diF/ dt = 50A/µs
Note: 5. Pulse test
Loading...