HIT HAT1036R Datasheet
Silicon P Channel Power MOS FET
Features
• Low on-resistance
R
= 11 mΩ typ
DS(on)
• Capable of -4 V gate drive
• Low drive current
• High density mounting
Outline
HAT1036R
Power Switching
ADE-208-662D (Z)
5th. Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT1036R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note2
Note1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|1220—S ID = -6 A, VDS = -10 V
Input capacitance Ciss — 4200 — pF VDS = -10 V
Output capacitance Coss — 870 — pF VGS = 0
Reverse transfer capacitance Crss — 360 — pF f = 1 MHz
Total gate charge Qg — 70 — nc VDD = -10 V
Gate to source charge Qgs — 12 — nc VGS = -10 V
Gate to drain charge Qgd — 14 — nc ID = -12 A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 1. Pulse test
-30 — — V ID = -10 mA, VGS = 0
——±0.1 µAVGS = ±20 V, VDS = 0
——-1µAVDS = -30 V, VGS = 0
-1.0 — -2.5 V VDS = -10 V, I D = -1 mA
—1114mΩ ID = -6 A, VGS = -10 V
—2134mΩ ID = -6 A, VGS = -4 V
— 120 — ns VGS = -4 V, ID = -6 A
— 350 — ns VDD ≅ -10 V
— 100 — ns
— 120 — ns
— -0.85 -1.11 V IF = -12 A, VGS = 0
— 55 — ns IF = -12 A, VGS = 0
-30 V
±20 V
-12 A
-96 A
-12 A
2.5 W
diF/ dt = 20 A/ µs
Note1
Note1
Note1
Note1
2
Main Characteristics
HAT1036R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
-50
-40
-10V
-5 V
-4 V
Pulse Test
-500
Maximum Safe Operation Area
-100
D
-10
-1
DC Operation (PW < 10 s)
Operation in
this area is
Drain Current I (A)
limited by R
-0.1
DS(on)
Ta = 25 °C
1 shot Pulse
-0.01
-0.1
-0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
-50
V = -10 V
DS
Pulse Test
-40
10 µs
100 µs
1 ms
PW = 10 ms
Note 4
DS
D
-30
-20
Drain Current I (A)
-10
0
-2 -4 -6 -8 -10
V = -3 V
GS
Drain to Source Voltage V (V)
-3.5 V
DS
D
-30
-20
Drain Current I (A)
-10
0
Tc = 75°C
-1 -2 -3 -4
Gate to Source Voltage V (V)
25°C
–25°C
-5
GS
3
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