HIT HAT1033T Datasheet
Silicon P Channel Power MOS FET
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
HAT1033T
High Speed Power Switching
ADE-208-532H (Z)
9th. Edition
February 1999
TSSOP–8
4
G
1
D
S
2
8
5
DD
S
S6S
3
5
6
7
8
4
3
2
1
1, 5, 8 Drain
2, 3, 6, 7 Source
7
4 Gate
HAT1033T
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body–drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdow voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 5 8.0 — S ID = – 2 A, VDS = – 10 V
Input capacitance Ciss — 970 — pF VDS = – 10 V
Output capacitance Coss — 510 — pF VGS = 0
Reverse transfer capacitance Crss — 150 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
– 20 — — V ID = – 10 mA, VGS = 0
± 10 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 8 V, VDS = 0
——– 1µAVDS = – 20 V, VGS = 0
– 0.4 — – 1.4 V VDS = – 10 V, I D = – 1 mA
— 0.046 0.063 Ω ID = – 2 A, VGS = – 4 V
— 0.061 0.090 Ω ID = – 2 A, VGS = – 2.5 V
— 16 — ns VGS = – 4 V, ID = – 2 A
— 100 — ns VDD ≅ – 10 V
— 245 — ns
—75—ns
— – 0.81 – 1.06 V IF = – 3.5 A, VGS = 0
— 65 — ns IF = – 3. 5A, VGS = 0
– 20 V
± 10 V
– 3.5 A
– 28 A
– 3.5 A
1.3 W
Note3
diF/ dt = 20 A/µs
Note3
Note3
Note3
2
Main Characteristics
HAT1033T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–10 V
–20
–4 V
–6 V
–16
D
–12
–8
–2.5 V
Pulse Test
–2 V
–100
Maximum Safe Operation Area
10 µs
DC Operation(PW<10s)
PW =
10 ms
D
–30
–10
–3
–1
–0.3
Operation in
this area is
Drain Current I (A)
–0.1
–0.03
–0.01
limited by R
Ta = 25 °C
1 shot pulse
–0.3 –1 –3 –10 –30 –100
–0.1
DS(on)
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
–20
Tc = –25 °C
–16
D
–12
25 °C
–8
100 µs
1 ms
Note 4
DS
75 °C
Drain Current I (A)
–4
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
V = –1.5 V
GS
DS
Drain Current I (A)
–4
0
–1
–2 –3 –4 –5
Gate to Source Voltage V (V)
V = –10 V
DS
Pulse Test
GS
3
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