HIT HAT1031T-D Datasheet

HAT1031T

Silicon P Channel Power MOS FET

High Speed Power Switching

ADE-208-528D (Z)

5th. Edition

December 1998

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

TSSOP–8

1, 8 Drain
2, 3, 6, 7 Source
4, 5 Gate

1

2

3

4

8

7

6

5

G

D

S
2

4

1

S
3

G

D

S

S

5

8

6

7

MOS1

MOS2

HAT1031T

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–20 V

Gate to source voltage V

GSS

±10 V

Drain current I

D

–2.5 A

Drain peak current I

D(pulse)

Note1

–20 A

Body–drain diode reverse drain current I

DR

–2.5 A

Channel dissipation Pch

Note2

1W

Channel dissipation Pch

Note3

1.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–20 — — V ID = –10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±10——V I

G

= ±100µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±8V, VDS = 0

Zero gate voltege drain current I

DSS

——–1µAVDS = –20 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

–0.5 — –1.5 V VDS = –10V, I D = –1mA

Static drain to source on state R

DS(on)

— 0.13 0.16 Ω ID = –2A, VGS = –4V

Note4

resistance R

DS(on)

— 0.21 0.28 Ω ID = –2A, VGS = –2.5V

Note4

Forward transfer admittance |yfs| 2.6 4 — S ID = –2A, VDS = –10V

Note4

Input capacitance Ciss — 390 — pF VDS = –10V
Output capacitance Coss — 200 — pF VGS = 0
Reverse transfer capacitance Crss — 70 — pF f = 1MHz
Turn-on delay time t

d(on)

— 14 — ns VGS = –4V, ID = –2A

Rise time t

r

— 75 — ns VDD ≈ –10V

Turn-off delay time t

d(off)

—60—ns

Fall time t

f

—55—ns

Body–drain diode forward voltage V

DF

— –0.9 –1.17 V IF = –2.5A, VGS = 0

Note4

Body–drain diode reverse
recovery time

t

rr

— 45 — ns IF = –2.5A, VGS = 0

diF/ dt =20A/µs

Note: 4. Pulse test

HAT1031T

3

Main Characteristics

2.0

1.5

1.0

0.5

0

50 100 150 200

–0.1

–100

–10

–1

–0.1

–0.01

–0.3 –1 –3 –10 –30 –100

–30

–3

–0.3

–0.03

PW=10 µs

100µs

10 ms

1 ms

–20

–16

–12

–8

–4

0

–2 –4 –6 –8 –10

V = –2.0 V

GS

–10 V

–4 V

–3.5 V

–3 V

–10

–8

–6

–4

–2

0

–2

–4 –6 –8 –10

Tc = –25 °C

75 °C

25 °C

–8 V

–6 V

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

2 Drive Operation

1 Drive Operation

Operation in
this area is
limited by R

DS(on)

Pulse Test

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

Note 5

DC Operation

(PW < 10 s)

Ta = 25 °C
1 shot Pulse
1 Drive Operation

V = –10 V
Pulse Test

DS

–2.5 V