HIT HAT1025R-D Datasheet

HAT1025R

Silicon P Channel Power MOS FET

High Speed Power Switching

ADE-208-437 H (Z)

9th. Edition

February 1999

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

HAT1025R

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

– 20 V

Gate to source voltage V

GSS

± 10 V

Drain current I

D

– 4.5 A

Drain peak current I

D(pulse)

Note1

– 36 A

Body–drain diode reverse drain current I

DR

– 4.5 A

Channel dissipation Pch

Note2

2W

Channel dissipation Pch

Note3

3W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

– 20 — — V ID = – 10 mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

± 10 — — V IG = ± 100µA, VDS = 0

Gate to source leak current I

GSS

——± 10 µAVGS = ± 8 V, VDS = 0

Zero gate voltege drain current I

DSS

——– 10µAVDS = – 20 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

– 0.5 — – 1.5 V VDS = – 10 V, I D = – 1 mA

Static drain to source on state R

DS(on)

— 0.065 0.095 Ω ID = – 3 A, VGS = – 4 V

Note4

resistance R

DS(on)

— 0.09 0.15 Ω ID = – 3 A, VGS = – 2.5 V

Note4

Forward transfer admittance |yfs| 4.5 7 — S ID = – 3 A, VDS = – 10 V

Note4

Input capacitance Ciss — 860 — pF VDS = – 10 V
Output capacitance Coss — 450 — pF VGS = 0
Reverse transfer capacitance Crss — 150 — pF f = 1MHz
Turn-on delay time t

d(on)

— 20 — ns VGS = – 4 V, ID = – 3 A

Rise time t

r

— 120 — ns VDD ≅ – 10 V

Turn-off delay time t

d(off)

— 120 — ns

Fall time t

f

— 100 — ns

Body–drain diode forward voltage V

DF

— – 0.9 – 1.4 V IF = – 4.5 A, VGS = 0

Note4

Body–drain diode reverse
recovery time

t

rr

— 60 — ns IF = – 4.5 A, VGS = 0

diF/ dt = 20 A/µs

Note: 4. Pulse test

HAT1025R

3

Main Characteristics

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

4.0

3.0

2.0

1.0

0

50 100 150 200

–0.1

–100

–10

–1

–0.1

–0.01

–0.3 –1 –3 –10 –30 –100

–30

–3

–0.3

–0.03

10 µs

100 µs

PW = 10 ms

1 ms

–20

–16

–12

–8

–4

0

–2 –4 –6 –8 –10

V = –1.5 V

GS

–2 V

–2.5 V

–10 V

–5 V
–4 V

–3.5 V

–3 V

–20

–16

–12

–8

–4

0

–1

–2 –3 –4 –5

Tc = –25 °C

75 °C

25 °C

2 Drive Operation

1 Drive Operation

Operation in
this area is
limited by R

DS(on)

Pulse Test

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

Note 5

DC Operation (PW < 10 s)

Ta = 25 °C
1 shot Pulse
1 Drive Operation

V = –10 V
Pulse Test

DS