HIT HAT1024R-D Datasheet
HAT1024R
Silicon P Channel Power MOS FET
High Speed Power Switching
ADE-208-476 G (Z)
8th. Edition
June 1997
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
SOP–8
1
2
3
4
5
6
7
8
G
DSD
G
DSD
MOS1
MOS2
1
2
78
4
5
6
3
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
HAT1024R
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–30 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
–3.5 A
Drain peak current I
D(pulse)
Note1
–28 A
Body–drain diode reverse drain current I
DR
–3.5 A
Channel dissipation Pch
Note2
2W
Channel dissipation Pch
Note3
3W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
HAT1024R
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30 — — V ID = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20 — — V IG = ±100µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16V, VDS = 0
Zero gate voltege drain current I
DSS
— — –10 µAV
DS
= –30 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
–1.0 — –2.5 V VDS = –10V, I D = –1mA
Static drain to source on state R
DS(on)
— 0.12 0.16 Ω ID = –2A, VGS = –10V
Note4
resistance R
DS(on)
— 0.2 0.34 Ω ID = –2A, VGS = –4V
Note4
Forward transfer admittance |yfs| 2.5 3.5 — S ID = –2A, VDS = –10V
Note4
Input capacitance Ciss — 350 — pF VDS = –10V
Output capacitance Coss — 230 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time t
d(on)
— 18 — ns VGS = –4V, ID = –2A
Rise time t
r
— 110 — ns VDD ≅ –10V
Turn-off delay time t
d(off)
—20—ns
Fall time t
f
—30—ns
Body–drain diode forward
voltage
V
DF
— –1.0 –1.5 V IF = –3.5A, VGS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
— 60 — ns IF = –3.5A, VGS = 0
diF/ dt =20A/µs
Note: 4. Pulse test
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