HIT HAT1023R Datasheet
Silicon P Channel Power MOS FET
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
HAT1023R
High Speed Power Switching
ADE-208-436 G (Z)
8th. Edition
June 1997
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT1023R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body–drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
–20 V
±10 V
–7 A
–56 A
–7 A
2.5 W
2
HAT1023R
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 9 14 — S ID = –4A, VDS = –10V
Input capacitance Ciss — 2250 — pF VDS = –10V
Output capacitance Coss — 1120 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body–drain diode reverse
t
rr
recovery time
Note: 3. Pulse test
–20 — — V ID = –10mA, VGS = 0
±10——V I
= ±100µA, VDS = 0
G
——±10 µAVGS = ±8V, VDS = 0
— — –10 µAVDS = –20 V, VGS = 0
–0.5 — –1.5 V VDS = –10V, I D = –1mA
— 0.027 0.04 Ω ID = –4A, VGS = –4V
— 0.04 0.06 Ω ID = –4A, VGS = –2.5V
— 40 — ns VGS = –4V, ID = –4A
— 200 — ns VDD ≅ –10V
— 280 — ns
— 220 — ns
— –0.9 –1.4 V IF = –7A, VGS = 0
Note3
— 75 — ns IF = –7A, VGS = 0
diF/ dt =20A/µs
Note3
Note3
Note3
3
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