HIT HAT1020R Datasheet
Silicon P Channel Power MOS FET
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
Outline
HAT1020R
High Speed Power Switching
ADE-208-435 H (Z)
9th. Edition
February 1999
SOP–8
4
G
56 7 8
D
D
DD
SSS
1
23
5
6
7
8
2
1
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
4
3
HAT1020R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body–drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs| 5.0 7.5 — S ID = – 3 A, VDS = – 10 V
Input capacitance Ciss — 860 — pF VDS = – 10 V
Output capacitance Coss — 560 — pF VGS = 0
Reverse transfer capacitance Crss — 165 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
t
d(on)
r
d(off)
f
DF
rr
recovery time
Note: 3. Pulse test
– 30 — — V ID = –10 mA, VGS = 0
± 20 — — V IG = ± 100 µA, VDS = 0
——± 10 µAVGS = ± 16 V, VDS = 0
— — –10 µAVDS = –30 V, VGS = 0
– 1.0 — – 2.5 V VDS = –10 V, I D = – 1 mA
— 0.04 0.07 Ω ID = – 3 A, VGS = – 10 V
— 0.07 0.13 Ω ID = – 3 A, VGS = – 4 V
— 30 — ns VGS = – 4 V, ID = – 3 A
— 170 — ns VDD ≅ – 10 V
—40—ns
—65—ns
— – 0.9 – 1.4 V IF = – 5 A, VGS = 0
— 55 — ns IF = – 5 A, VGS = 0
– 30 V
± 20 V
– 5 A
– 40 A
– 5 A
2.5 W
Note3
diF/ dt = 20 A/µs
Note3
Note3
Note3
2
Main Characteristics
HAT1020R
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–20
–16
–10 V
–6 V
–5 V
–4 V
–4.5 V
D
–12
–3.5 V
Pulse Test
–100
Maximum Safe Operation Area
–30
D
–10
DC Operation (PW < 10 s)
–3
–1
Operation in
this area is
–0.3
limited by R
Drain Current I (A)
–0.1
–0.03
–0.01
Ta = 25 °C
1 shot pulse
–0.3 –1 –3 –10 –30 –100
–0.1
DS(on)
Drain to Source Voltage V (V)
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
–20
V = –10 V
DS
Pulse Test
–16
D
–12
10 µs 100 µs
1 ms
PW = 10 ms
Note 4
DS
–8
Drain Current I (A)
–4
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
–3 V
V = –2.5 V
GS
DS
–8
Drain Current I (A)
–4
0
–1
75 °C
–2 –3 –4 –5
Gate to Source Voltage V (V)
Tc = –25 °C
25 °C
GS
3
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