HIT HAT1016R-D Datasheet

HAT1016R

Silicon P Channel Power MOS FET

High Speed Power Switching

ADE-208-471 D (Z)

5th. Edition

February 1999

Features

• Low on-resistance

• Capable of 4 V gate drive

• Low drive current

• High density mounting

Outline

SOP–8

1

2

3

4

5

6

7

8

G

DSD

G

DSD

MOS1

MOS2

1

2

78

4

5

6

3

1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

HAT1016R

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

– 30 V

Gate to source voltage V

GSS

± 20 V

Drain current I

D

– 4.5 A

Drain peak current I

D(pulse)

Note1

– 36 A

Body–drain diode reverse drain current I

DR

– 4.5 A

Channel dissipation Pch

Note2

2W

Channel dissipation Pch

Note3

3W
Channel temperature Tch 150 °C
Storage temperature Tstg – 55 to + 150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

–30 — — V ID = –10 mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ± 100 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ± 16 V, VDS = 0

Zero gate voltege drain current I

DSS

— — –10 µAVDS = – 30 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

–1.0 — –2.5 V VDS = – 10 V, I D = – 1 mA

Static drain to source on state R

DS(on)

— 0.07 0.09 Ω ID = – 3 A, VGS = – 10 V

Note4

resistance R

DS(on)

— 0.11 0.18 Ω ID = – 3 A, VGS = – 4 V

Note4

Forward transfer admittance |yfs|46—SI

D

= – 3 A, VDS = – 10 V

Note4

Input capacitance Ciss — 660 — pF VDS = – 10 V
Output capacitance Coss — 440 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Turn-on delay time t

d(on)

— 24 — ns VGS = – 4 V, ID = – 3 A

Rise time t

r

— 165 — ns VDD ≅ – 10 V

Turn-off delay time t

d(off)

—35—ns

Fall time t

f

—70—ns

Body–drain diode forward voltage V

DF

— –0.9 –1.4 V IF = – 4.5 A, VGS = 0

Note4

Body–drain diode reverse
recovery time

t

rr

— 60 — ns IF = – 4.5 A, VGS = 0

diF/ dt = 20 A/µs

Note: 4. Pulse test

HAT1016R

3

Main Characteristics

4.0

3.0

2.0

1.0

0

50 100 150 200

–0.1

–100

–10

–1

–0.1

–0.01

–0.3 –1 –3 –10 –30 –100

–30

–3

–0.3

–0.03

10 µs

100 µs

PW = 10 ms

1 ms

–20

–16

–12

–8

–4

0

–2 –4 –6 –8 –10

–10 V

–4 V

–20

–16

–12

–8

–4

0

–1

–2 –3 –4 –5

–2.5 V

V = –2 V

GS

–3.5 V

–5 V

–8 V

–6 V

–4.5 V

–3 V

Tc = 75 °C

–25 °C

25 °C

Channel Dissipation Pch (W)

Ambient Temperature Ta (°C)

Power vs. Temperature Derating

Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Pulse Test

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

V = –10 V
Pulse Test

DS

Note 5 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)

Note 5

DC Operation (PW < 10 s)

2 Drive Operation

1 Drive Operation

Operation in
this area is
limited by R

DS(on)

Ta = 25 °C
1 shot Pulse
1 Drive Operation