HIT HAF2005 Datasheet
HAF2005
Silicon N Channel MOS FET Series
Power Switching
ADE-208-688 (Z)
Target specification 1st. Edition
Nov. 1998
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220FM
G
Tempe–
rature
Sencing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut–
down
Circuit
D
1
2
3
S
1. Gate
2. Drain
3. Source
HAF2005
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
Input current I
(Gate non shut down) I
Input current I
(Gate non shut down) I
Shut down temperature T
Gate operation voltage V
V
IH1
IH2
I
IL
IH(sd)1
IH(sd)2
IH
IL
sd
op
3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8V, VDS = 0
——50µA Vi = 3.5V, VDS = 0
——1 µA Vi = 1.2V, VDS = 0
— 0.8 — mA Vi = 8V, VDS = 0
— 0.35 — mA Vi = 3.5V, VDS = 0
— 175 — °C Channel temperature
3.5 — 12 V
60 V
(16) V
(–2.5) V
40 A
80 A
40 A
30 W
2
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