HIT HAF2002 Datasheet
HAF2002
Silicon N Channel MOS FET Series
Power Switching
ADE-208-503 A (Z)
2nd. Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220FM
G
Tempe–
rature
Sencing
Circuit
Gate resistor
Latch
Circuit
Gate
Shut–
down
Circuit
D
1
2
3
S
1. Gate
2. Drain
3. Source
HAF2002
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch
DSS
GSS
GSS
D
D(pulse)
DR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
60 V
16 V
–2.8 V
20 A
40 A
20 A
30 W
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
Input current I
(Gate non shut down) I
Input current I
(Gate shut down) I
Shut down temperature T
Gate operation voltage V
V
IH1
IH2
I
IL
IH(sd)1
IH(sd)2
IH
IL
sd
OP
3.5 — — V
— — 1.2 V
— — 100 µA Vi = 8V, VDS = 0
——50µA Vi = 3.5V, VDS = 0
——1 µA Vi = 1.2V, VDS = 0
— 0.8 — mA Vi = 8V, VDS = 0
— 0.35 — mA Vi = 3.5V, VDS = 0
— 175 — °C Channel temperature
3.5 — 13 V
2
HAF2002
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current I
Drain current I
Drain to source breakdown
D1
D2
V
(BR)DSS
10——AV
——10mAV
60——VI
voltage
Gate to source breakdown
V
(BR)GSS
16——VI
voltage
Gate to source breakdown
V
(BR)GSS
–2.8 — — V IG = –100µA, VDS = 0
voltage
Gate to source leak current I
Input current (shut down) I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state
GSS1
I
GSS2
I
GSS3
I
GSS4
GS(op)1
I
GS(op)2
DSS
GS(off)
R
DS(on)
— — 100 µAVGS = 8V, VDS = 0
——50µAVGS = 3.5V, VDS = 0
——1 µAVGS = 1.2V, VDS = 0
— — –100 µAVGS = –2.4V, VDS = 0
— 0.8 — mA VGS = 8V, VDS = 0
— 0.35 — mA VGS = 3.5V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0
1.0 — 2.25 V ID = 1mA, VDS = 10V
—5065mΩI
resistance
Static drain to source on state
R
DS(on)
—3043mΩI
resistance
Forward transfer admittance |yfs| 6 12 — S ID = 10A, VDS = 10V
Output capacitance Coss — 630 — pF VDS = 10V , VGS = 0
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward
V
d(on)
r
d(off)
f
DF
— 7.5 — µsI
—29—µsR
—34—µs
—26—µs
— 1.0 — V IF = 20A, VGS = 0
voltage
Body–drain diode reverse
t
rr
— 110 — ns IF = 20A, VGS = 0
recovery time
Over load shut down t
operation time
Note4
os1
t
os2
— 1.8 — ms VGS = 5V, VDD = 12V
— 0.7 — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
See characteristic curve of HAF2001.
= 3.5V, VDS = 2V
GS
= 1.2V, VDS = 2V
GS
= 10mA, VGS = 0
D
= 100µA, VDS = 0
G
= 10A, VGS = 4V
D
= 10A, VGS = 10V
D
f = 1 MHz
= 5A, VGS = 5V
D
= 6Ω
L
diF/ dt =50A/µs
Note3
Note3
Note3
3
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