HIT HAF1002-S, HAF1002-L Datasheet
HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series
Power Switching
ADE-208-586 (Z)
1st. Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (–4 to –6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut –down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
HAF1002(L), HAF1002(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
–60 V
Gate to source voltage V
GSS+
–16 V
Gate to source voltage V
GSS–
3V
Drain current I
D
–15 A
Drain peak current I
D(pulse)
Note1
–30 A
Body-drain diode reverse drain current I
DR
–15 A
Channel dissipation Pch
Note2
50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage V
IH
–3.5 — — V
V
IL
— — –1.2 V
Input current I
IH1
— — –100 µA Vi = –8V, VDS = 0
(Gate non shut down) I
IH2
— — –50 µA Vi = –3.5V, VDS = 0
I
IL
——–1µA Vi = –1.2V, VDS = 0
Input current I
IH(sd)1
— –0.8 — mA Vi = –8V, VDS = 0
(Gate shut down) I
IH(sd)2
— –0.35 — mA Vi = –3.5V, VDS = 0
Shut down temperature T
sd
— 175 — °C Channel temperature
Gate operation voltage V
OP
–3.5 — –13 V
Loading...