HIT HA22039 Datasheet

HA22039

GaAs IC

Low Distortion Mixer for Micro Wave Application

Features

• Suitable for low distortion of Micro Wave Application

• Low voltage and low current operation (3V, 7mA typ.)

• Low insertion loss (1.0 dB typ. @800MHz)

• Small surface mount package (MPAK–6)

Outline

ADE-207-271 (Z)

Preliminary

1st. Edition

August 1999

MPAK—6

This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.

CAUTION

This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not
treat them mechanically in the manner which might expose to the Aer. And it should never be thrown
out with general industrial or domestic wastes.

HA22039

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Supply voltage Vdd 5 V
Maximum current Idd 60 mA
Power dissipation Pd 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +125 °C
Operation temperature Topr –30 to +85 °C

Electrical Characteristics (Ta = 25°C, Vdd = 3V, Idd = 7mA)

Item Symbol Min Typ Max Unit Test Conditions

Insertion loss CL 0 1 3 dB f = 800 MHz, PRF = -10dBm, Plo = 0dBm

Typical Performance (Ta = 25°C, Vdd = 3V, Idd = 7mA)

Item Symbol Typ Unit Test Conditions

3rd order input intercept point IP3in 12 dBm f = 800 MHz, PRF = -10dBm, Plo = 0dBm
Noise Figure (DSB) NF 7 dB

Block Diagram

HA22039

Lo in

Vd

IF out

*

0.16φ, 7.5T

**

0.16φ, 5.5T

*

1

*

2

3

*

6

5

4

10k

*

*1000pF

RF in

*

*

0.16φ, 7.5T

100

HA22039

Pin Arrangement

1

2

3

GG : Mark Type
a to d : Year Code (variable)
e to f : Monthly Code (variable)

Pin No. Pin name Function

1 G1 Gate
2 D1 Drain
3 D2 Drain
4 S2 Source
5 S1 Source
6 G2 Gate

GG

e f g h

Top View

a b c d

6

5

4