HIT HA22033 Datasheet

HA22033

GaAs MMIC

Low Noise Amplifier for Micro Wave Application

Features

• Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz)

• Low voltage and low current operation (2.7V, 1.7mA typ.)

• Low noise (1.4 dB typ. @1.5GHz)

• High power gain (14 dB typ. @1.5GHz)

• Built–in matching circuits (50Ω)

• Small surface mount package (MPAK–5)

ADE-207-266 (Z)

1st. Edition

October 1998

Outline

MPAK–5

This document may, wholly or partially, be subject to change without notice.

This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.

CAUTION

This product ues GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not

HA22033

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Supply voltage Vdd 5 V
Maximum current Idd 6 mA
Power dissipation Pd 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +125 °C
Operation temperature Topr –20 to +70 °C
Maximum input power Pin max +15 dBm

Electrical Characteristics (Ta = 25°C, Vdd = 2.7V)

Item Symbol Min Typ Max Unit Test Conditions Pin

Quiescent current Idd — 1.7 2.5 mA No signal
Power gain PG 12 14 — dB f = 1.5 GHz
Noise figure NF — 1.4 2 dB f = 1.5 GHz

Typical Performance (Ta = 25°C, Vdd = 2.7V)

Item Symbol Typ Unit Test Conditions Pin

VSWR (input) VSWR in 1.5 — f = 1.5 GHz 4
VSWR (output) VSWR out 2.2 — f = 1.5 GHz 1
3rd order intermodulation

distortion

IM3 50 dB f = 1.5 GHz, Pin = –30 dBm

Block Diagram

HA22033

in

Vdd

1.5pF

5.6nH

100pF

4

5

3

2

1

Cs

100pF

GND

out

HA22033

Pin Arrangement

G E A

Monthly code (variable)

Mark type

1

GEA

5

2

3

Top View

Pin No. Pin name Function

1 RF out RF output
2 GND Ground
3 Cs Bypath capacitor (>100 pF)
4 RF in RF input
5 Vdd Power supply

4