HIT HA22032T Datasheet

HA22032T

GaAs MMIC

Down Converter for Micro Wave Application

Features

• Suitable for down converter of Micro Wave Application(1.5 GHz)

• Low voltage and low current operation (3V, 9 mA typ.)

• Low noise (2 dB typ. @1.5 Ghz)

• High power gain (26 dB typ. @1.5 GHz)

• Built–in matching circuits (50 Ω)

• Small surface mount package (TSSOP-8)

ADE-207-259 (Z)

1st. Edition

May 1998

Outline

TTP-8D

This document may, wholly or partially, be subject to change without notice.

This Device si sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.

HA22032

Pin Arrangement

7 6 5

8

HA32

8A1

HA32

Mark type

8A1

Weekly code(variable)
Monthly code(variable)
Yearly code(variable)

2 3 4

1

Top View

Pin No. Pin name Function

1 Vddlo Power supply (Lo)
2 Vddln Power supply (LNA)
3 GND Ground
4 RF in RF input
5 Cs Bypath capacitor (>100 pF)
6 IF out IF output
7 GND Ground
8 Lo in Local input

Block Diagram

HA22032

Vdd

RF in

1.5pF

*

6.8nH

2.7nH

1

2
3

4

*:1000+15pF

8

7
6

390nH

5

*

1.5pF

5pF

220nH

*

Lo in

IF out

Vdd

HA22032

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Supply voltage Vdd 5 V
Maximum current Idd 15 mA
Power dissipation Pd 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +125 °C
Operation temperature Topr –20 to +70 °C
Maximum input power Pin max +18 dBm

Electrical Characteristics (Ta = 25°C, Vdd = 3V)

Item Symbol Min Typ Max Unit Test Conditions

Quiescent current Idd 5 9 12 mA No signal
Power gain PG 23 26 29 dB f = 1489 Mhz, fLo = 1619 Mhz,

Plo = –15 dBm, IF = 130 Mhz,
Pin = –30dBm

Noise figure NF — 2 3 dB f = 1489 Mhz, fLo = 1619 Mhz,

Plo = –15 dBm, IF = 130 MHz

Typical Performance (Ta = 25°C, Vdd = 3V)

Item Symbol Typ Unit Test Conditions

VSWR (input) VSWRin2 — f = 1.489 GHz

3rd order inter-cept point IP3o +4 dBm f = 1.489 GHz, fud =1.490 Ghz, Pin = –30 dBm,

fLo = 1.619 Ghz, Plo = –15 dBm

Main Characteristics

HA22032

Conversion gain,Noise figure

29

Vdd = 3V
Pin = –30dBm
IF = 130MHz

28

PLo = –15dBm
Ta = +25°C

27

26

25

24

vs.Frequency

CG

NF

Conversion gain CG (dB)

23

1400

1450

Frequency f (MHz)

3rd order inter-cept point(out)

3

2.5

2

8

Vdd = 3V
Pin = –30dBm
IF = 130MHz
PLo = –15dBm
Ta = +25°C

6

2 signals input

4

2

vs. Frequency

Noise figure NF (dB)

1.5

160015501500

0

3rd order inter-cept point IP3o (dBm)

1400

1450

160015501500

Frequency f (MHz)

2.5

2

VSWR

1.5

1

1475

1605

VSWR vs. Frequency

Vdd = 3V
Ta = +25°C

RF

Lo

1480

14901485

1495

Frequency(RF) RF (MHz)

1610

16201615

1625

1500

1630

1505

1635

Conversion gain,3rd order inter-cept point

29

28

27

26

25

24

Conversion gain CG (dB)

23

-55

vs. Input power

-55

-45

CG

-40

IP3o

Vdd = 3V
f = 1489MHz
fLo = 1619MHz
PLo = –15dBm
Ta = +25°C
2 signals input

-30

-35

-35

-20

Frequency f (MHz)

6

5

4

3

2

1

0

3rd order inter-cept point IP3o (dBm)

HA22032

Conversion gain,Noise figure

29

f = 1489 MHz
Pin = –30 dBm
IF = 130 MHz

28

PLo = –15 dBm
Ta = +25°C

27

26

25

24

Conversion gain CG (dB)

23

2

vs. Supply voltage

2.5

3.53

CG

NF

Supply voltage Vdd (V)

3rd order inter-cept point

vs. Supply voltage

2.5

3

2

8

f = 1489 MHz
Pin = –30 dBm
IF = 130 MHz
PLo = –15dBm

6

Ta = +25°C
2 signals input

4

2

Noise figure NF (dB)

1.5

4

4.5

5

0

3rd order inter-cept point IP3o (dBm)

2

2.5

3.53

4

4.5

5

Supply voltage Vdd (V)

2.5
RF = 1489 MHz
Lo = 1619 MHz
Ta = +25°C

2

VSWR

1.5

1

2

VSWR vs. Supply voltage

RF

Lo

2.5

3.53

4

Supply voltage Vdd (V)

4.5

Quiescent current vs. Supply voltage

12

Ta = +25°C

11
10

9
8
7
6

Quiescent current Idd (mA)

5

2

5

2.5

3.53

4

4.5

5

Supply voltage Vdd (V)

HA22032

Conversion gain,Noise figure

29

28

27

26

25

24

Conversion gain CG (dB)

23

-25

vs. Ambient temperature

CG

NF

250

Ambient Temperture Ta (°C)

Vdd = 3 V
f = 1489 MHz
Pin = –30 dBm
IF = 130 MHz
PLo = –15 dBm

50

75

3

2.5

2

8

6

4

2

Noise figure NF (dB)

1.5

0

3rd order inter-cept point IP3o (dBm)

-25

3rd order inter-cept point
vs. Ambient temperature

Vdd = 3 V
f = 1489 MHz
Pin = –30 dBm
IF = 130 MHz
PLo = –15 dBm
2 signals input

250

50

Ambient Temperature Ta (°C)

75

VSWR vs. Ambient temperature

2.5

Vdd = 3V
RF = 1489 MHz
Lo = 1619 MHz

RF

2

VSWR

1.5

1

-25

250

Ambient temperature Ta (°C)

Lo

50

75

Quiescent vs. Ambient temperature

12

Vdd = 3V

11
10

9
8
7
6

Quiescent current Idd (mA)

5

-25

250

Ambient temperature Ta (°C)

50

75

HA22032

Conversion gain,Noise figure

29

Vdd = 3V
f = 1489 MHz
Pin = –30 dBm

28

IF = 130 MHz
Ta = +25°C

27

26

25

24

Conversion gain CG (dB)

23

-50

vs. Local power

-20-25

-15

Local power PLo (dBm)

CG

NF

-10

-5

3

2.5

2

10

5

0

Noise figure NF (dB)

1.5

3rd inter-cept point IP3o (dBm)

-5

-50

3rd order inter-cept point

vs. Local power

Vdd = 3 V
f = 1489 MHz
Pin = –30 dBm
IF = 130 MHz
Ta = +25°C
2 signals input

-20-25

Local power PLo (dBm)

-15

-10

-5

Package Dimentions

3.00

3.30 Max
85

14

+0.08

0.22

0.20 ± 0.06

–0.07

4.40

0.65

M

0.13

0.805 Max*

HA22032

Unit: mm

1.0

6.40 ± 0.20

0.10

1.10 Max

Dimension including the plating thickness

Base material dimension

+0.03

–0.04

0.07

0.17 ± 0.05

0.15 ± 0.04

0° – 8°

0.50 ± 0.10

Note: Include Mold Flash

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TTP-8D
—
—
—

HA22032

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.

2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.

HA22032

Hitachi, Ltd.

Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone]
Fax: [phone]

For further information write to:

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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

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