HIT HA22032T Datasheet

HA22032T
GaAs MMIC
Down Converter for Micro Wave Application
Features
Suitable for down converter of Micro Wave Application(1.5 GHz)
Low noise (2 dB typ. @1.5 Ghz)
High power gain (26 dB typ. @1.5 GHz)
Built–in matching circuits (50 Ω)
Small surface mount package (TSSOP-8)
ADE-207-259 (Z)
1st. Edition
May 1998
Outline
TTP-8D
This document may, wholly or partially, be subject to change without notice.
This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
HA22032
Pin Arrangement
7 6 5
8
HA32
8A1
HA32
Mark type
8A1
Weekly code(variable) Monthly code(variable) Yearly code(variable)
2 3 4
1
Top View
Pin No. Pin name Function
1 Vddlo Power supply (Lo) 2 Vddln Power supply (LNA) 3 GND Ground 4 RF in RF input 5 Cs Bypath capacitor (>100 pF) 6 IF out IF output 7 GND Ground 8 Lo in Local input
Block Diagram
HA22032
Vdd
RF in
1.5pF
*
6.8nH
2.7nH
1
2 3
4
*:1000+15pF
8
7 6
390nH
5
*
1.5pF
5pF
220nH
*
Lo in
IF out
Vdd
HA22032
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Supply voltage Vdd 5 V Maximum current Idd 15 mA Power dissipation Pd 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +125 °C Operation temperature Topr –20 to +70 °C Maximum input power Pin max +18 dBm
Electrical Characteristics (Ta = 25°C, Vdd = 3V)
Item Symbol Min Typ Max Unit Test Conditions
Quiescent current Idd 5 9 12 mA No signal Power gain PG 23 26 29 dB f = 1489 Mhz, fLo = 1619 Mhz,
Plo = –15 dBm, IF = 130 Mhz, Pin = –30dBm
Noise figure NF 2 3 dB f = 1489 Mhz, fLo = 1619 Mhz,
Plo = –15 dBm, IF = 130 MHz
Typical Performance (Ta = 25°C, Vdd = 3V)
Item Symbol Typ Unit Test Conditions
VSWR (input) VSWRin2 f = 1.489 GHz
3rd order inter-cept point IP3o +4 dBm f = 1.489 GHz, fud =1.490 Ghz, Pin = –30 dBm,
fLo = 1.619 Ghz, Plo = –15 dBm
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