HIT 2SK2726 Datasheet
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Avalanche ratings
Outline
2SK2726
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-453 B
3rd. Edition
TO–220CFM
G
D
1
2
3
S
1. Gate
2. Drain
3. Source
2SK2726
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
3
3
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
500 V
±30 V
7A
28 A
7A
7A
2.7 mJ
30 W
2
2SK2726
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltege drain
GSS
I
DSS
current
Gate to source cutoff voltage V
Static drain to source on state
R
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 3.5 6.0 — S ID = 4A, VDS = 10V*
Input capacitance Ciss — 1100 — pF VDS = 10V
Output capacitance Coss — 330 — pF VGS = 0
Reverse transfer capacitance Crss — 65 — pF f = 1MHz
Total gate charge Qg — 21 — nc VDD = 400V
Gate to source charge Qgs — 5 — nc VGS = 10V
Gate to drain charge Qgd — 8 — nc ID = 7A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
500 — — V ID = 10mA, VGS = 0
±30——V I
——±10 µAV
——10µAV
= ±100µA, VDS = 0
G
= ±25V, VDS = 0
GS
= 500 V, VGS = 0
DS
2.5 — 3.5 V ID = 1mA, VDS = 10V*
— 0.75 0.95 Ω ID = 4A, VGS = 10V*
— 20 — ns VGS = 10V, ID = 4A
— 65 — ns RL = 7.5Ω
—60—ns
—40—ns
— 0.95 — V ID = 7A, VGS = 0
— 260 — ns IF = 7A, VGS = 0
diF/ dt = 100A/µs
1
1
1
3
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