HIT 2SK2590 Datasheet

2SK2590

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No Secondary Breakdown

• Suitable for Switching regulator, DC-DC converter, Motor Control

Preliminary

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SK2590

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

200 V
±20 V
7A
28 A
7A
50 W

2