HIT 2SK2586 Datasheet

2SK2586

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• R

• High speed switching

• 4 V gate drive device can be driven from 5 V source

= 7 m typ.

DS(on)

ADE-208-358 C

4th. Edition

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2586

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current ID*
Drain peak current I
Body to drain diode reverse drain current IDR*
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

2

D(pulse)

1

*

2

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
60 A
240 A
60 A
45 A
174 mJ
125 W

2