HIT 2SK2570 Datasheet

Features

• Low on-resistance

R

= 0. 8Ω typ. (VGS = 4 V, ID = 100 mA)

DS(on)

• 2.5V gate drive devices.

• Small package (MPAK)

Outline

2SK2570

Silicon N-Channel MOS FET

Low Frequency Power Switching

ADE-208-574

1st. Edition

MPAK

G

3

1

2

D

1. Source

2. Gate

3. Drain

S

2SK2570

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I

DSS

GSS

D

D(pulse)

1

*
Channel dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltege drain

I

DSS

current
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 0.22 0.35 — S ID = 100 mA

Input capacitance Ciss — 45 — pF VDS = 10V
Output capacitance Coss — 33 — pF VGS = 0
Reverse transfer capacitance Crss — 9.6 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Notes: 1. Pulse test

2. Marking is “ZL–”

20——V I

±10——V I

— — 1.0 µAV

——±5.0 µAV

0.5 — 1.5 V ID = 10µA, VDS = 5V
— 0.8 1.1 Ω ID = 100 mA

— 1.3 2.2 Ω ID = 40 mA

— 20 — ns VGS = 5V, ID = 100 mA
— 60 — ns RL = 100Ω
— 240 — ns
— 140 — ns

20 V
±10 V

0.2 A

0.4 A

= 10µA, VGS = 0

D

= ±100µA, VDS = 0

G

DS

GS

V

GS

V

GS

V

DS

= 20 V, VGS = 0

= ±6.5V, VDS = 0

1

= 4V *

= 2.5V *

= 10V *

1

1

2

Main Characteristics

2SK2570

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

0.20
10 V

0.16

D

5 V

2.5 V

0.12

2 V

1.8 V

Maximum Safe Operation Area

5
2

1

D

0.5

0.2

0.1

DC Operation

Operation in

0.05

this area is

Drain Current I (A)

limited by R

0.02
Ta = 25 °C

0.01

1 shot

0.05

0.2 0.5 2 5 20

DS(on)

11050

Drain to Source Voltage V (V)

Typical Transfer Characteristics

0.20

0.16

75°C

D

0.12

25°C

Tc = –25°C

1 ms

PW =

10 ms

(1 shot)

100

DS

0.08

Drain Current I (A)

0.04

0

246810

Drain to Source Voltage V (V)

V = 1.6 V

GS

Pulse Test

DS

0.08

Drain Current I (A)

0.04

V = 10 V

DS

Pulse Test

0

0.5 1.0 1.5 2.0 2.5

Gate to Source Voltage V (V)

GS

3