Silicon N-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance.
• R
• 2.5V gate drive device.
• Small package (MPAK).
= 2.6 max. (at VGS = 4 V, ID = 100mA)
DS(on)
2SK2569
ADE-208-384
1st. Edition
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
2SK2569
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Zero gate voltage drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state
DSS
GSS
R
GS(off)
DS(on)1
resistance
Static drain to source on state
R
DS(on)2
resistance
Foward transfer admittance |yfs| 0.13 0.23 — S ID = 100 mA
Input capacitance Ciss — 14.0 — pF VDS = 10 V
Output capacitance Coss — 17.2 — pF VGS = 0
Reverse transfer capacitance Crss — 1.73 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Notes 1. Pulse Test
2. Marking is "ZN–"
50 — — V ID = 100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
— — 1.0 µAVDS = 40 V, VGS = 0
——±2.0 µAVGS = ±16 V, VDS = 0
0.5 — 1.5 V ID = 10 µA, VDS = 5 V
— 2.0 2.6 Ω ID = 100 mA
— 3.1 5.0 Ω ID = 40 mA
—40—µsVGS = 10 V, ID = 100 mA
—86—µsR
— 1120 — µs
— 430 — µs
50 V
±20 V
0.2 A
0.4 A
150 mW
= 4 V*
= 2.5 V*
= 10 V
1
1
V
GS
V
GS
V
DS
= 300 Ω
L
2
2SK2569
Maximum Channel
Dissipation Curve
200
150
100
50
Channel Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10 V 4 V
0.20
0.16
D
2.5 V
0.12
0.08
2.3 V
2 V
Maximum Safe Operation Area
1
1 ms
PW = 10 ms
DC Operation
D
0.3
0.1
0.03
Operation in
this area is
limited by R
DS(on)
0.01
Drain Current I (A)
0.003
0.001
Ta = 25 °C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)
Typical Transfer Characteristics
0.20
0.16
D
0.12
25°C
Tc = 75°C
–25°C
0.08
DS
Drain Current I (A)
0.04
Pulse Test
0
246810
Drain to Source Voltage V (V)
V = 1.5 V
GS
DS
0.04
Drain Current I (A)
0
12345
Gate to Source Volta
V = 5 V
DS
Pulse Test
e V (V
GS
3