HIT 2SK2568 Datasheet

2SK2568

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• Suitable for switching regulator and DC-DC converter

Preliminary

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2568

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current ID*
Drain peak current I
Body to drain diode reverse drain current IDR*
Channel dissipation Pch*

DSS

GSS

2

D(pulse)

1

*

2

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

500 V
±30 V
12 A
48 A
12 A
100 W

2