HIT 2SK2554 Datasheet
2SK2554
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• R
• High speed switching
• 4 V gate drive device can be driven from 5 V source
= 4.5 mΩ typ.
DS(on)
ADE-208-359 D
5th. Edition
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK2554
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current IDR*
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
1
*
2
3
3
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
60 V
±20 V
75 A
300 A
75 A
50 A
214 mJ
150 W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|5080—SI
Input capacitance Ciss — 7700 — pF VDS = 10 V
Output capacitance Coss — 4100 — pF VGS = 0
Reverse transfer capacitance Crss — 760 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse Test
60 — — V ID = 10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
— — 100 µAVDS = 60 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 4.5 6 mΩ ID = 40 A
V
= 10 V*
GS
— 5.8 10 mΩ ID = 40 A
V
= 4 V*
GS
= 40 A
D
V
= 10 V*
DS
1
1
1
— 60 — ns ID = 40 A
— 420 — ns VGS = 10 V
— 1200 — ns RL = 0.75 Ω
— 900 — ns
— 0.95 — V IF = 75 A, VGS = 0
— 105 — ns IF = 75 A, VGS = 0
diF / dt = 50 A / µs
2SK2554
3
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