HIT 2SK2553-S, 2SK2553-L Datasheet
2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-357H (Z)
9th. Edition
February 1999
Application
High speed power switching
Features
• Low on-resistance
• R
DS(on)
= 7 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
3
2
1
4
3
2
1
4
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK2553(L), 2SK2553(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
60 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
50 A
Drain peak current I
D(pulse)
Note 1
200 A
Body to drain diode reverse drain current I
DR
50 A
Avalanche current I
AP
Note 3
45 A
Avalanche energy E
AR
Note 3
174 mJ
Channel dissipation Pch
Note 2
75 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
3. Value at Tch = 25 °C, Rg ≥ 50 Ω
2SK2553(L), 2SK2553(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
——10µAV
DS
= 60 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
— 7 10 mΩ ID = 25 A
V
GS
= 10 V
Note 1
—1016mΩ ID = 25 A
V
GS
= 4 V
Note 1
Forward transfer admittance |yfs|3555—SI
D
= 25 A
V
DS
= 10 V
Note 1
Input capacitance Ciss — 3550 — pF VDS = 10 V
Output capacitance Coss — 1760 — pF VGS = 0
Reverse transfer capacitance Crss — 500 — pF f = 1 MHz
Turn-on delay time t
d(on)
— 35 — ns ID = 25 A
Rise time t
r
— 230 — ns VGS = 10 V
Turn-off delay time t
d(off)
— 470 — ns RL = 1.2 Ω
Fall time t
f
— 360 — ns
Body to drain diode forward
voltage
V
DF
— 0.85 — V IF = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 135 — ns IF = 50 A, VGS = 0
di
F
/ dt = 50 A / µs
Note 1. Pulse Test
See characteristic curves of 2SK2529.
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