HIT 2SK2529 Datasheet
2SK2529
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• R
• High speed switching
• 4 V gate drive device can be driven from 5 V source
= 7 mΩ typ.
DS(on)
ADE-208-356F
7th. Edition
Outline
TO-220CFM
G
D
S
1
2
3
1. Gate
2. Drain
3. Source
2SK2529
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
3
3
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
60 V
±20 V
50 A
200 A
50 A
45 A
174 mJ
35 W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|3555—SI
Input capacitance Ciss — 3550 — pF VDS = 10 V
Output capacitance Coss — 1760 — pF VGS = 0
Reverse transfer capacitance Crss — 500 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
60 — — V ID = 10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 60 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 7 10 mΩ ID = 25 A
V
= 10 V*
GS
—1016mΩI
= 25 A
D
V
= 4 V*
GS
= 25 A
D
V
= 10 V*
DS
1
1
1
— 35 — ns ID = 25 A
— 230 — ns VGS = 10 V
— 470 — ns RL = 1.2 Ω
— 360 — ns
— 0.85 — V IF = 50 A, VGS = 0
— 135 — ns IF = 50 A, VGS = 0
di
/ dt = 50 A / µs
F
2SK2529
3
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