HIT 2SK2393 Datasheet
2SK2393
Silicon N-Channel MOS FET
Application
High voltage / High speed power switching
Features
• Low on-resistance, High breakdown voltage
• High speed switching
• Low Drive Current
• No Secondary Breakdown
• Suitable for Switching regulator, Motor Control
Outline
TO-3PL
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK2393
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 1.8 3.0 — S ID = 4 A
Input capacitance Ciss — 4370 — pF VDS = 10 V
Output capacitance Coss — 560 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
1500 — — V ID = 10 mA, VGS = 0*
——±1µAVGS = ±20 V, VDS = 0
— — 500 µAVDS = 1200 V, VGS = 0
2.0 — 4.0 V ID = 1 mA, VDS = 10 V
— 1.9 2.8 Ω ID = 4 A
— 75 — ns ID = 4 A
— 180 — ns VGS = 10 V
— 260 — ns RL = 7.5 Ω
— 125 — ns
— 0.9 — V IF = 8 A, VGS = 0
— 6.5 — µsI
1500 V
±20 V
8A
20 A
8A
200 W
V
= 15 V*
GS
V
= 20 V*
DS
= 8 A, VGS = 0,
F
di
/ dt = 100 A / µs
F
1
1
1
2
2SK2393
400
Power vs. Temperature Derating
300
200
100
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10
8
15 V
10 V
8 V
D
6
Pulse Test
7 V
100
Maximum Safe Operation Area
30
10 µs
D
10
PW = 10 ms (1shot)
3
Operation in
this area is
1
limited by R
Drain Current I (A)
DC Operation (Tc = 25°C)
DS(on)
100 µs
1 ms
0.3
Ta = 25 °C
0.1
20 50 100 200 500 1000 2000
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
5
V = 10 V
DS
Pulse Test
4
D
3
4
Drain Current I (A)
2
V = 5 V
0
10 20 30 40 50
Drain to Source Voltage V (V)
GS
6 V
DS
2
Drain Current I (A)
1
0
Tc = 75°C
246810
Gate to Source Voltage V (V)
25°C
–25°C
GS
3
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