HIT 2SK2373 Datasheet
2SK2373
Silicon N-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Small package
• Low drive current
• 4 V gate drive device can be driven from 5 V source.
• Suitable for low signal load switch
ADE-208-268
1st. Edition
Outline
MPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
2SK2373
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %
2. Marking is “ZE–”.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Input capacitance Ciss — 17.8 — pF VDS = 10 V
Output capacitance Coss — 25.4 — pF VGS = 0
Reverse transfer capacitance Crss — 3.7 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Note 1. Pulse Test
30 — — V ID = 100 µA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±2µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0
1.0 — 2.0 V ID = 10 µA, VDS = 5 V
— 1.4 2.5 Ω ID = 20 mA
— 1.0 1.4 Ω ID = 10 mA
— 50 — ns ID = 0.1 A
— 125 — ns VGS = 10 V
— 660 — ns RL = 100 Ω
— 400 — ns PW = 2 µs
30 V
±20 V
0.2 A
0.4 A
0.2 A
150 mW
= 4 V*
= 10 V*
1
1
V
GS
V
GS
2
2SK2373
Maximum Channel Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
Pulse Test
1.6
D
5 V
4.5 V
1.2
4 V
0.8
3.5 V
Drain Current I (A)
0.4
V = 2.5 V
GS
3 V
Maximum Safe Operation Area
1
0.3
D
0.1
DC Operation
0.03
Operation in
0.01
Drain Current I (A)
0.003
this area is
limited by R
DS(on)
Ta = 25 °C
0.001
1 shot pulse
0.1 0.3
1
Drain to Source Voltage V (V)
Typical Transfer Characteristics
0.5
V = 10 V
0.4
D
0.3
DS
75 °C
0.2
Drain Current I (A)
0.1
25 °C
1 ms
PW =
10 ms
3 10 30 100
DS
Ta = –25 °C
0
2
46810
Drain to Source Voltage V (V)
DS
0
12345
Gate to Source Voltage V (V)
GS
3
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