HIT 2SK2315 Datasheet

2SK2315

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 2.5 V gate drive device can be driven from 3 V source.

• Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Outline

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SK2315

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)

3. Marking is “TY”

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 1.5 1.8 — S ID = 1 A

Input capacitance Ciss — 173 — pF VDS = 10 V
Output capacitance Coss — 85 — pF VGS = 0
Reverse transfer capacitance Crss — 23 — pF f = 1 MHz
Turn-on time t
Turn-off time t

on

off

Note 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5µAVGS = ±16 V, VDS = 0
——5 µAVDS = 50 V, VGS = 0

0.5 — 1.5 V ID = 1 mA, VDS = 10 V
— 0.4 0.6 Ω ID = 0.3 A

— 0.35 0.45 Ω ID = 1 A

— 21 — ns ID = 1 A, RL = 30 Ω
— 85 — ns VGS = 10 V

60 V
±20 V
2A
4A
2A
1W

= 3 V*

= 4 V*

= 10 V*

1

1

1

V

GS

V

GS

V

DS

2

2SK2315

Power vs. Temperature Derating

1.6

1.2

0.8

0.4

Channel Dissipation Pch** (W)

(** on the almina ceramic board)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

5

10 V

5 V

4

D

4 V

3.5 V

Ta = 25 °C
Pulse Test

3 V

3

Maximum Safe Operation Area

5

100 µs

2
1

D

0.5

0.2
Operation in

0.1
this area is

limited by R

0.05

Drain Current I (A)

0.02

0.01

0.005

0.2 0.5 1 2 5 10 20 50 100 200

DC Operation

DS(on)

Ta = 25 °C
1 shot pulse

1 ms

PW = 10 ms

Drain to Source Voltage V (V)

Typical Transfer Characteristics

5

4

Tc = 75 °C

D

3

25 °C

–25 °C

DS

2

Drain Current I (A)

1

V = 1.5 V

GS

0

246810

Drain to Source Voltage V (V)

2.5 V

2 V

DS

2

Drain Current I (A)

1

0

12345

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3