HIT 2SK2225 Datasheet

Application

High speed power switching

Features

2SK2225

Silicon N-Channel MOS FET

ADE-208-140

1st. Edition

• High breakdown voltage (V

• High speed switching

• Low drive current

• No Secondary Breakdown

• Suitable for Switching regulator, DC-DC converter

= 1500 V)

DSS

Outline

TO-3PFM

D

G

S

1

2

3

1. Gate

2. Drain

3. Source

2SK2225

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A

Input capacitance Ciss — 990 — pF VDS = 10 V
Output capacitance Coss — 125 — pF VGS = 0
Reverse transfer capacitance Crss — 60 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

1500 — — V ID = 10 mA, VGS = 0

——±1µAVGS = ±20 V, VDS = 0
— — 500 µAVDS =1200 V, VGS = 0

2.0 — 4.0 V ID = 1 mA, VDS = 10 V
—9 12Ω I

— 17 — ns ID = 1 A
— 50 — ns VGS = 10 V
— 150 — ns RL = 30 Ω
—50—ns
— 0.9 — V IF = 2 A, VGS = 0

— 1750 — ns IF = 20 A, VGS = 0,

1500 V
±20 V
2A
7A
2A
50 W

= 1 A

D

V

= 15 V*

GS

V

= 20 V*

DS

di

/ dt = 100 A / µs

F

1

1

2

2SK2225

Power vs. Temperature Derating

80

60

40

20

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

D

5

4

Pulse Test

15 V

3

10 V

7 V

8 V

Maximum Safe Operation Area

10

3

D

1

PW = 10 ms (1shot)

DC Operation (Tc = 25 °C)

10 µs

100 µs

1 ms

0.3

Operation in

0.1

this area is

Drain Current I (A)

limited by R

DS(on)

0.03
Ta = 25 °C

0.01

10 30 100 300 1000 3000 10000

Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

2.0

V = 25 V

1.6

D

1.2

DS

Pulse Test

2

Drain Current I (A)

1

V = 4 V

0

20 40 60 80 100

Drain to Source Voltage V (V)

GS

6 V

5 V

DS

0.8

Drain Current I (A)

0.4

0

246810

Gate to Source Voltage V (V)

Tc = 75 °C

25 °C

–25 °C

GS

3