HIT 2SK2221, 2SK2220 Datasheet

2SK2220, 2SK2221

Silicon N-Channel MOS FET

Application

Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352

Features

• High power gain

• Excellent frequency response

• High speed switching

• Wide area of safe operation

• Enhancement-mode

• Good complementary characteristics

• Equipped with gate protection diodes

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Source

S

(Flange)

3. Drain

2SK2220, 2SK2221

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK2220 V

DSX

2SK2221 200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

DR

1

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note 1. Value at Tc = 25 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK2220 V
breakdown

2SK2221 200 — —

(BR)DSX

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source cutoff voltage V

Drain to source saturation

V

GS(off)

DS(sat)

voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A

Input capacitance Ciss — 600 — pF VGS = –5 V
Output capacitance Coss — 800 — pF VDS = 10 V
Reverse transfer capacitance Crss — 8 — pF f = 1 MHz
Turn-on time t
Turn-off time t

on

off

Note 1. Pulse Test

180 — — V ID = 10 mA, VGS = –10 V

±20 — — V IG = ±100 µA, VDS = 0

0.15 — 1.45 V ID = 100 mA

——12V I

— 250 — ns VDD = 30 V
— 90 — ns ID = 4 A

180 V

±20 V
8A
8A
100 W

V

= 10 V

DS

= 8 A, VGD = 0 V*

D

V

DS

= 10 V*

1

1

2

2SK2220, 2SK2221

150

Power vs. Temperature Derating

100

50

Channel Dissipation Pch (W)

0

50 100 150

Case Temperature Tc (°C)

10

(A)

D

Typical Output Characteristics

GS

=

9
8

7

V
10 V

8

6

6

5

Pch = 125 W

T

= 25°C

C

Maximum Safe Operation Area

20

PW = 10 ms (1 Shot)

PW = 100 ms (1 Shot)

(A)

D

10

5

DC Operation (T

2

C

= 25°C)

1.0

Drain Current I

0.5
2SK2220 2SK2221

0.2

5 10 50 200

20 100 500

Drain to Source Voltage V

Typical Output Characteristics

10

TC = 25°C

8

(A)

D

6

Ta = 25°C

DS

V

GS

9

(V)

= 10 V

8

7
6

5

4

Drain Current I

2

10 30 400

Drain to Source Voltage V

4

3

2

01

20 50

(V)

DS

4

Drain Current I

2

2680

Drain to Source Voltage VDS (V)

4
3

2
1

0

410

3