HIT 2SK217 Datasheet

Application

VHF amplifier

Outline

MPAK

2SK217

Silicon N-Channel Junction FET

3

1

2

1. Gate

2. Drain

3. Source

2SK217

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Gate to drain current V
Drain current I
Gate current I

GDO

D

G

Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to drain breakdown

V

(BR)GDO

voltage
Gate cutoff current I
Gate to source cutoff voltage V
Drain current I

GSS

GS(off)

DSS

Forward transfer admittance |yfs| — 8.0 — mS V
Reverse transfer capacitance Crss — 0.1 — pF V

Note: 1. The 2SK217 is grouped by I

Grade C D E

Mark ZC ZD ZE
I

DSS

2.5 to 5 4 to 8 6 to 12

–30 — — V IG = –100 µA

— — –10 nA VGS = –0.5 V, VDS = 0
— — –2.5 V V

1

*

2.5 — 12 mA VDS = 5 V, VGS = 0

as follows.

DSS

–30 V
20 mA
10 mA

= 5 V, ID = 10 µA

DS

= 5 V, VGS = 0, f = 1 kHz

DS

= 5 V, VGS = 0, f = 1 MHz

DS

2

2SK217

Maximum Channel Power

Dissipation Curve

150

100

50

Channel Power Dissipation Pch (mW)

0 50 100 150

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

10

VGS = 0

8

(mA)

D

6

–0.2 V

–0.4

4

–0.6

Drain Current I

2

–0.8
–1.0

Typical Output Characteristics (1)

10

= 0

V

GS

8

(mA)

D

6

–0.2 V

P

ch

= 150 mW

–0.4

4

Drain Current I

2

–0.6

–0.8

–1.0

0 1020304050

Drain to Source Voltage V

DS

(V)

Typical Transfer Characteristics

15

10

(mA)

D

VDS = 5 V

5

Drain Current I

E

D

C

0 12345

Drain to Source Voltage V

DS

(V)

0

–2–3 –1 0

Gate to Source Voltage V

GS

(V)

3