HIT 2SK216, 2SK215, 2SK213, 2SK214 Datasheet
2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching.
Complementary pair with 2SJ76, J77, J78, J79
Features
• Suitable for direct mounting
• High forward transfer admittance
• Excellent frequency response
• Enhancement-mode
Outline
TO-220AB
G
1
D
S
2
3
1. Gate
2. Source
(Flange)
3. Drain
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK213 V
DSX
2SK214 160
2SK215 180
2SK216 200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
GSS
D
DR
Channel dissipation Pch 1.75 W
1
Pch*
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
140 V
±15 V
500 mA
500 mA
30 W
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK213 V
(BR)DSX
140 — — V ID = 1 mA, VGS = –2 V
breakdown voltage 2SK214 160 — — V
2SK215 180 — — V
2SK216 200 — — V
Gate to source breakdown
V
(BR)GSS
±15——V I
= ±10 µA, VDS = 0
G
voltag
Gate to source voltage V
Drain to source saturation
V
GS(on)
DS(sat)
0.2 — 1.5 V ID = 10 mA, VDS = 10 V *
— — 2.0 V ID = 10 mA, VGD = 0 *
1
voltage
Forward transfer admittance |yfs|2040—mSI
= 10 mA, VDS = 20 V *
D
Input capacitance Ciss — 90 — pF ID = 10 mA, VDS = 10 V,
Reverse transfer capacitance Crss — 2.2 — pF f = 1 MHz
Note: 1. Pulse test
1
1
2
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