HIT 2SK2115, 2SK2114 Datasheet
2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for Switching regulator
Outline
1
2
3
TO-220CFM
1. Gate
2. Drain
3. Source
D
G
S
2SK2114, 2SK2115
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK2114 V
DSS
450 V
2SK2115 V
DSS
500
Gate to source voltage V
GSS
±30 V
Drain current I
D
5A
Drain peak current I
D(pulse)
*
1
20 A
Body to drain diode reverse drain current I
DR
5A
Channel dissipation Pch*
2
35 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
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