HIT 2SK2096 Datasheet

2SK2096

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

• Avalanche ratings

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2096

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
45 A
180 A
45 A
45 A
173 mJ
100 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs|2537—SI

Input capacitance Ciss — 3530 — pF VDS = 10 V
Output capacitance Coss — 1480 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.25 V ID = 1 mA, VDS = 10 V
— 0.018 0.022 Ω ID = 25 A

V

= 10 V*

GS

— 0.023 0.028 Ω ID = 25 A

V

= 4 V*

GS

= 25 A

D

V

= 10 V*

DS

1

1

1

— 33 — ns ID = 25 A
— 160 — ns VGS = 10 V
— 450 — ns RL = 1.5 Ω
— 230 — ns
— 1.3 — V IF = 45 A, VGS = 0

— 130 — ns IF = 45 A, VGS = 0,

di

/ dt = 50 A / µs

F

2SK2096

See characteristic curve of 2SK1911.

3