HIT 2SK2085 Datasheet
2SK2085
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
G
3
2
D
S
1
1. Source
2. Drain
3. Gate
2SK2085
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
100 V
±20 V
1.0 A
4.0 A
1.0 A
0.9 W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 0.7 1.2 — S ID = 0.5 A
Input capacitance Ciss — 130 — pF VDS = 10 V
Output capacitance Coss — 50 — pF VGS = 0
Reverse transfer capacitance Crss — 12 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
100 — — V ID = 10 mA, VGS = 0
±20 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±16 V, VDS = 0
— — 100 µAVDS = 80 V, VGS = 0
1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.6 0.9 Ω ID = 0.5 A
V
= 10 V*
GS
— 0.75 1.35 Ω ID = 0.5 A
V
= 4 V*
GS
V
= 10 V*
DS
—7 —nsI
= 0.5 A
D
1
1
1
— 6.5 — ns VGS = 10 V
— 55 — ns RL = 60 Ω
—20—ns
— 0.85 — V IF = 1.0 A, VGS = 0
— 80 — ns IF = 1.0 A, VGS = 0,
di
/ dt = 50 A / µs
F
2SK2085
3
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