HIT 2SK2008 Datasheet
2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
G
D
1
2
3
1. Gate
2. Drain
S
3. Source
2SK2008
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
250 V
±30 V
20 A
80 A
20 A
60 W
2
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