HIT 2SK1968 Datasheet
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
• Low drive current
2SK1968
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
2SK1968
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
600 V
±30 V
12 A
48 A
12 A
100 W
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 5 10 — S ID = 6 A
Input capacitance Ciss — 1800 — pF VDS = 10 V
Output capacitance Coss — 400 — pF VGS = 0
Reverse transfer capacitance Crss — 60 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
600 — — V ID = 10 mA, VGS = 0
±30 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.68 0.88 Ω ID = 6 A
V
= 10 V*
GS
V
= 10 V*
DS
1
1
— 25 — ns ID = 6 A
— 70 — ns VGS = 10 V
— 145 — ns RL = 5 Ω
—65—ns
— 1.1 — V IF = 12 A, VGS = 0
— 670 — ns IF = 12 A, VGS = 0,
di
/ dt = 100 A / µs
F
2SK1968
3
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