HIT 2SK1934 Datasheet

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on–resistance

• High speed switching

• No secondary breakdown

• Suitable for Switching regulator

2SK1934

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1934

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

1000 V
±30 V
8A
24 A
8A
150 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs|46—SI

Input capacitance Ciss — 2690 — pF VDS = 10 V
Output capacitance Coss — 920 — pF VGS = 0
Reverse transfer capacitance Crss — 375 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

1000 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 800 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 1.2 1.6 Ω ID = 4 A

V

= 10 V*

GS

= 4 A

D

V

= 20 V*

DS

1

1

— 35 — ns ID = 4 A
— 135 — ns VGS = 10 V
— 300 — ns RL = 7.5 Ω
— 205 — ns
— 0.9 — V IF = 8 A, VGS = 0

— 1600 — µsI

= 8 A, VGS = 0,

F

di

/ dt = 100 A / µs

F

2SK1934

3