HIT 2SK1880-S Datasheet
2SK1880(L), 2SK1880(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1880(L), 2SK1880(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
600 V
Gate to source voltage V
GSS
±30 V
Drain current I
D
1.5 A
Drain peak current I
D(pulse)
*
1
3.0 A
Body to drain diode reverse drain current I
DR
1.5 A
Channel dissipation Pch*
2
20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2SK1880(L), 2SK1880(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
— — 100 µAV
DS
= 500 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
— 6.5 8.0 Ω ID = 1 A
V
GS
= 10 V*
1
Forward transfer admittance |yfs| 0.85 1.4 — S ID = 1 A
V
DS
= 20 V*
1
Input capacitance Ciss — 250 — pF VDS = 10 V
Output capacitance Coss — 55 — pF VGS = 0
Reverse transfer capacitance Crss — 8 — pF f = 1 MHz
Turn-on delay time t
d(on)
— 10 — ns ID = 1 A
Rise time t
r
— 25 — ns VGS = 10 V
Turn-off delay time t
d(off)
— 35 — ns RL = 30 Ω
Fall time t
f
—30—ns
Body to drain diode forward
voltage
V
DF
— 0.95 — V IF = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 350 — µsI
F
= 1.5 A, VGS = 0,
di
F
/ dt = 100 A / µs
Note 1. Pulse Test
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