HIT 2SK1859 Datasheet

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low Drive Current

• No secondary breakdown

• Suitable for Switching regulator

2SK1859

Outline

TO-3PFM

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1859

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

900 V
±30 V
6A
15 A
6A
60 W

2