HIT 2SK1838-S, 2SK1838-L Datasheet
2SK1838(L), 2SK1838(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-1
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
2SK1838(L), 2SK1838(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
250 V
Gate to source voltage V
GSS
±30 V
Drain current I
D
1A
Drain peak current I
D(pulse)
*
1
2A
Body to drain diode reverse drain current I
DR
1A
Channel dissipation Pch*
2
10 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30——V I
G
= ±100 µA, VDS = 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
— — 100 µAV
DS
= 200 V, VGS = 0
Gate to source cutoff voltage V
GS(off)
2.0 — 3.0 V VDS = 10 V, ID = 1 mA
Forward transfer admittance |yfs| 0.3 0.5 — S VDS = 10 V, ID = 0.5 A *
1
Static drain to source on state
resistance
R
DS(on)
— 5.5 8.0 Ω ID = 0.5 A, VGS = 10 V *
1
Input capacitance Ciss — 60 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 30 — pF f = 1 MHz
Reverse transfer capacitance Crss — 5 — pF
Turn-on delay time t
d(on)
—5 —nsV
GS
= 10 V, ID = 0.5 A,
Rise time t
r
—6 —nsR
L
= 60 Ω
Turn-off delay time t
d(off)
—10—ns
Fall time t
f
— 4.5 — ns
Body to drain diode forward
voltage
V
DF
— 0.96 — V IF = 1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
— 160 — ns IF = 7 A, VGS = 0,
di
F
/dt = 100 A/µs
Note 1. Pulse test
2SK1838(L), 2SK1838(S)
3
20
15
10
5
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
Drain Current I (A)
D
DS
13
10 30 100
300
1000
0.1
0.3
1
3
10
100 s
PW = 10 ms (1 shot)
10 s
µ
Operation in this area
is limited by R (on)
DS
1 ms
Ta = 25°C
0.03
0.01
DC Operation (Tc = 25°C)
µ
Maximum Safe Operation Area
Drain to Source Voltage V (V)
Drain Current I (A)
DS
D
0
2
4
6
810
0.2
0.4
0.6
0.8
1.0
Pulse Test
8 V
10 V
6 V
4.5 V
4 V
V = 3.5 V
GS
5 V
Typical Output Characteristics
Gate to Source Voltage V (V)
Drain Current I (A)
GS
D
Tc = 75°C
25°C
– 25°C
Pulse Test
V = 10 V
DS
0
2
46
810
0.2
0.4
0.6
0.8
1.0
Typical Transfer Characteristics
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