HIT 2SK1837, 2SK1836 Datasheet
2SK1836, 2SK1837
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter
Outline
TO-3PL
G
D
1
2
3
1. Gate
2. Drain (Flange)
S
3. Source
2SK1836, 2SK1837
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage K1836 V
DSS
K1837 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
450 V
±30 V
50 A
200 A
50 A
250 W
2
2SK1836, 2SK1837
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source K1836 V
breakdown
K1837 500 — —
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate K1836 I
voltage drain
K1837 VDS = 400 V, VGS = 0
GSS
DSS
current
Gate to source cutoff voltage V
Static drain to K1836 R
source on state
K1837 — 0.085 0.11 VGS= 10 V*
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|2235—SI
Input capacitance Ciss — 8150 — pF VDS = 10 V
Output capacitance Coss — 2100 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
450 — — V ID = 10 mA, VGS = 0
±30 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.08 0.10 Ω ID = 25 A
1
= 25 A
D
V
DS
= 10 V*
1
— 80 — ns ID = 25 A
— 250 — ns VGS = 10 V
— 550 — ns RL = 1.2 Ω
— 220 — ns
— 1.1 — V IF = 50 A, VGS = 0
— 620 — ns IF = 50 A, VGS = 0,
di
/ dt = 100 A / µs
F
3
2SK1836, 2SK1837
Power vs. Temperature
400
300
200
100
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
D
100
80
Pulse Test
60
8 V
10 V
6 V
5.5 V
Maximum Safe Operation Area
1000
Operation in this area
is limited by R (on)
300
100
30
D
10
3
Drain Current I (A)
1
Ta = 25°C
0.3
0.1
13
Drain to Source Voltage V (V)
Typical Transfer Characteristics
100
V = 20 V
DS
Pulse Test
80
D
60
DS
10 s
100 ms
1 ms
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
K1836
K1837
10 30 100
DS
µ
300
1000
40
Drain Current I (A)
20
0
4812
Drain to Source Voltage V (V)
5 V
4.5 V
V = 4 V
GS
16
DS
40
Drain Current I (A)
20
Tc = 75°C
25°C
– 25°C
20
0
2
Gate to Source Voltage V (V)
4
6
810
GS
4
Loading...